Low-Frequency Noise Measurements Application for Analysis of Thermal and Electric Stress Effects on Power Devices
DOI:
https://doi.org/10.47187/perspectivas.vol2iss2.pp7-12.2020Keywords:
Electronic Noise, Electrical Characterization, Power Devices Reliability, Low Frequency Noise MeasurementAbstract
This document presents the study of the effect of thermal and electrical stress on power semiconductor devices through low-frequency noise measurements. A High Temperature Reverse Bias test (HTRB) was applied to the power devices, determining their electrical characteristics before and after the HTRB. The tools used for this study were a variable voltage source up to 1200V designed for the application of electrical stress, a temperature module consisting of a mini-heater and a control module designed for the application of thermal stress together with the Keithley 4200-SCSn parameter analyzer for current-voltage characterization and a low frequency noise measurement system for characterization of conductive channels in electronic devices. The results indicate a higher level of flicker noise in the considered MOSFETs after stress application that is related to changes in the threshold voltage because of the applied stress, directly correlating these parameters.
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Copyright (c) 2020 Sofia Berrones, Ronald Marcelo Barcia Macías, Mildred Cajas Buenaño, Andres Morocho Caiza
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